電気・電子システムジャーナル

Analytical Study of Electron Mobility in Hemts Algan/Gan

Abstract

Nouacry A, Touhami A, Benkassou A, Bouziane A and Aouaj A

The hetero junctions GaN based offer an excellent potential for power applications at high frequency. This is due to the important energy of the bandgap and high saturation velocity of electrons. The high mobility transistors (HEMT - High Electron Mobility Transistor) are based on the heterojunction AlGaN/GaN. Our work is the subject of an analytical study of the carrier mobility HEMTs AlGaN/GaN calculating Ionized impurities scattering, Residual impurities scattering, Interface roughness scattering, Alloy disorder scattering, dislocations scattering, Phonons and Dipoles taking into account the impact of technological parameters (doping, aluminium content) and geometric (thickness barrier, interface roughness). The results allowed us to take account of the variation of carrier density in the wells of 2D electronic gas.