材料科学および工学ジャーナル

Simulation to Study the Effect of Carrier Concentration on I-V Characteristics of Schottky Diode

Abstract

Sharma R

The current-voltage characteristics for Au/n-Si Schottky diode are generated by simulation. The simulation performed using Newton-Raphson iteration method yields current-voltage characteristics over wide temperature range. The data is analyzed using TDE-mechanism to study the temperature dependence of barrier height and ideality factor. Results obtained from simulation studies show the barrier height and ideality factor are independent of temperature for pure TE-mechanism. Thus the simulation of I-V characteristics is performed by incorporating ideality factor, obtained on the basis of carrier concentration from 1022-1024 atoms/m3. The result of analysis yield barrier height is still independent of temperature but the ideality factor becomes temperature dependent and this dependence of ideality factor on temperature increases with increase in carrier concentration. Further, the temperature dependence of barrier height and ideality factor is discussed and simulation of current-voltage characteristics is performed.