材料科学および工学ジャーナル

Ferromagnetism in (Ga, Mn) as Synthesized by Mn+ Ion Implantation and 5 MeV Si++ Ion Beam induced Recrystallization

Abstract

S K Dubey

In this study, gallium arsenide samples were first implanted with 325 V Mn ke + ions for the fluence of 16 2 2 10 ions cm− × . These implanted samples were further irradiated using 2 5MeVSi + ion beams for the fluence of 16 2 1 10 ions cm− × at a substrate temperature of 350 0C for recrystallization. Super conducting quantum interface device (SQUID) measurements on asimplanted sample revealed the paramagnetic behavior. While, after irradiation with 2 5MeVSi + ions, SQUID measurements showed the hysteresis loop indicative of the ferromagnetic behavior. Ferromagnetic transition temperature after irradiation of (Ga,Mn). As samples measured from zero field cool and field cool measurements were found to be 292 Kelvin.