材料科学および工学ジャーナル

Determining the Amount of Hydrogen in Thin Films Well Si_1-xGe_x: H (X = 0 ÷ 1) for Electronic Devices

Abstract

Najafov BA and Russia

Possibilities of plasma chemical deposition of �?�?°-Si1-xGex:H (x=0 ÷ 1) films undoped and doped with PH3 or B2H6 have been analyzed from the viewpoint of their application in p-i-n structures of solar cell. The optical properties are considered, and the amount of hydrogen contained in those films is determined. The film properties are found to strongly depend on the film composition and the hydrogenation level. The number of hydrogen atoms in the films is varied by changing the gas mixture composition, and IR absorption in �?�?°-Si:H and �?�?°-Ge:H films is measured. The �?�?°-Si:H and �?�?°-Si0,88Ge1,2:H films were used to fabricate three-layer solar with an element area of 13 sm2 and an efficiency (ξ) of 9.5%.